plasma based copper dry etching process yue kuo

A new hydrogen chloride plasma-based copper

A new hydrogen chloride plasma-based copper etching process KUO Yue Résumé / Abstract The plasma-copper reaction of this new copper dry etching process

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how to etch copper pdf - docscrewbanks com

Plasma Etching Outline Investigation of a copper etching technique to fabricate Gold etch using potassium iodide solution INRF application note Process

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Reactive Ion Etching - Dr Yue Kuo DOW Professor

Reactive Ion Etching RIE Plasma-Based Copper Dry Etching Process Liu amp Kuo ECS Plasma XV proc Kuo et al JKPS

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A New Hydrogen Chloride Plasma-Based Copper

A New Hydrogen Chloride Plasma-Based Copper Etching Process on as well as to the understanding of this new copper dry etching process Yue Kuo Taewoo Chung

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Photoassisted dry etching of GaN -

Plasma-Based Copper Dry Etching Process - Dr Yue Kuo process control of chrome dry etching by complete : Low-temperature dry etching of

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HBr Plasma Based Copper Etch Process

HBr Plasma Based Copper Etch Process Sangheon Lee and Yue Kuo Thin Film Microelectronics Research Laboratory Department of Chemical Engineering

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how to etch copper pdf - docscrewbanks com

Plasma Etching Outline Investigation of a copper etching technique to fabricate Gold etch using potassium iodide solution INRF application note Process

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Plasma processing in the fabrication of

Y Kuo quot Plasma Etching Mechanism of Metal Oxides Derived from RIE quot MOW Etching Process Using Chemical Dry Etching for Lower Resistive Gate Metal copper

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Patent US - Anisotropic etch of copper

Y Kuo and S Lee It is known that the O-based plasma will consume C-based passivation quot A New Copper Dry Etching Process quot Electrochemical Society

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Plasma processing damage in etching and

Plasma-based etching and deposition are key J Rembetski P Aum and Y D Chan quot Impact of Poly-Si Dry Etching on 0 5 Micron NMOS Transistor Yue Kuo Pages

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C Y Nakakura - academic research microsoft com

Fields of study Electrical amp Electronic Engineering Grain-Size Effect on a Plasma-Based Copper Etch Process Guojun Dry Etching and Planarization of Copper

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The etching of Cu with Cl2 Journal of

Guojun Liu Yue Kuo Grain-Size Effect on a Plasma-Based Copper Etch Process Dry Etching and Planarization of Copper

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Chlorine Plasma/Copper Reaction in a New

Chlorine Plasma/Copper Reaction in a New Copper Dry Etching Process Yue Kuo Thin Film The chlorine plasma/copper reaction that is the base of a new

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Patent US - Method of forming a

Yue Kuo et al quot A Reactive Ion Etching Based Copper Etch quot A Novel Plasma-Based Copper Dry Etching Method Yue Luo et al quot Plasma Process of a New Copper

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Method of forming a conductive pattern by

Method of forming a conductive pattern by removing a Yue Luo et al A New Copper Dry Etching Plasma-Based Copper Etching Process for

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Hydrogen bromide plasma copper reaction in a

which is the base of a new copper etching process of this new copper dry etching process the plasma copper reaction process based on the

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A New Hydrogen Chloride Plasma-Based Copper

A New Hydrogen Chloride Plasma-Based Copper Etching Process A Novel Plasma-Based Copper Dry Etching Method Yue Kuo and of this new copper dry etching process

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Carbon-based flexible micro-supercapacitor

in a dry oven at C for min This process was micro-plasma-jet etching process and based materials implying that this plasma

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Process effects of copper film over a step etched

Comparison of Cl 2 and F-based dry etching for high Chi-Chou Lin and Yue Kuo S Lee A Study of Plasma-Based Copper Etching Reaction Process

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A Novel Plasma-Based Copper Dry Etching Method

A Novel Plasma-Based Copper Dry Etching Method on 1st Yue Kuo 2nd Sangheon Lee The chlorine plasma/copper reaction that is the base of a new copper Cu dry

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Reactive Ion Etching RIE - Dr Yue Kuo DOW

Reactive Ion Etching Plasma-Based Copper Dry Etching Process Hydrogenated photoresist is more resistant to plasma etching Y Kuo APL 2 1A1B

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The etching of Cu with Cl2 Journal of

Guojun Liu Yue Kuo Grain-Size Effect on a Plasma-Based Copper Etch Process Dry Etching and Planarization of Copper

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A Novel Plasma-Based Copper Dry Etching Method

A Novel Plasma-Based Copper Dry Etching A New Hydrogen Chloride Plasma-Based Copper Etching Process Sangheon Lee and Yue Kuo Influence of Reactive Ion Etching

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Chlorine Plasma/Copper Reaction in a New

Chlorine Plasma/Copper Reaction in a New Copper Dry Etching Process Yue Kuo Thin Film The chlorine plasma/copper reaction that is the base of a new

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Reactive ion etching of copper in SiCl4based

Copper may become an alternative to aluminum as an interconnect material in ultralarge scale integration multilevel metallization schemes if it is possible to pattern

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Plasma processing damage in etching and

Plasma-based etching and deposition are key J Rembetski P Aum and Y D Chan quot Impact of Poly-Si Dry Etching on 0 5 Micron NMOS Transistor Yue Kuo Pages

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Plasma processing in the fabrication of

Y Kuo quot Plasma Etching Mechanism of Metal Oxides Derived from RIE quot MOW Etching Process Using Chemical Dry Etching for Lower Resistive Gate Metal copper

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Copper metallization for ULSL and beyond

Guojun Liu Yue Kuo Plasma-Based Copper-Etch Process and Sidewall Attack Dry Etching and Planarization of Copper

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- Dry Etch Process Introduction - -

Plasma-Based Copper Dry Etching Process - Dr Yue Kuo strongSiCstrong Substrate Via Etch Process P P Plasma Etching on Patterned Wafer P P Gas

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A New Hydrogen Chloride Plasma-Based Copper

A New Hydrogen Chloride Plasma-Based Copper Etching Process Authors Lee Sangheon Kuo Yue the plasma-phase of this new copper dry etching process

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